PHYSICAL FOUNDATIONS OF THE FERROELECTRIC EFFECT AND ANALYSIS OF ITS APPLICATIONS IN THE MODERN MICROELECTRONICS INDUSTRY
Keywords:
Ferroelectricity, polarization, perovskite, hafnium oxide, negative capacitance, memristor, Curie temperature, dielectric permittivity.Abstract
The article analyzes the microscopic mechanisms determining the physical nature of ferroelectric materials and thermodynamic models of phase transitions. The significance of thin-film structures based on hafnium oxide (HfO_2) in modern industry, specifically in microelectronics, is highlighted. The study provides a scientific basis for the prospects of utilizing the negative capacitance effect and ferroelectric tunnel junctions in neuromorphic computing systems.
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