DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE TRANSVERSE DIFFERENTIAL MAGNETORESISTANCE IN A QUANTUM WELL HETEROSTRUCTURE

Authors

  • U. I. Erkaboev Author
  • A. A. Numonjonov Author
  • R. G. Rakhimov Namangan State Technical University Author

Keywords:

Quantum well, differential magnetoresistance, Shubnikov–de Haas effect, Landau levels, temperature dependence, nonparabolic dispersion, narrow-gap semiconductors, heterostructure.

Abstract

In this paper, the temperature dependence of differential magnetoresistance oscillations in a heterostructure based on an In₀.₅₃Ga₀.₄₇As quantum well is studied. The analysis was carried out in weak (0.6–1.22 T) and strong (up to 4 T) magnetic fields, over a temperature range of 3–40 K. While no oscillations are observed in ordinary magnetoresistance in weak fields, oscillations related to Landau levels appear when the differential magnetoresistance (dρ/dB) is calculated. As the temperature increases, the amplitude of the oscillations decreases. The differential method enables visual observation of Landau quantization even in weak magnetic fields.

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Published

2026-05-21

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Section

Articles

How to Cite

DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE TRANSVERSE DIFFERENTIAL MAGNETORESISTANCE IN A QUANTUM WELL HETEROSTRUCTURE. (2026). Educator Insights: Journal of Teaching Theory and Practice, 2(5), 240-258. https://brightmindpublishing.com/index.php/EI/article/view/2652